HOT ! 山崎瞬平（共）編／酸化物半導体CAAC-IGZOの物理と技術：LSIへの応用 スピントランジスタの実現に向けて酸化物素子で巨大磁気抵抗と電流変調

スピントランジスタの実現に向けて酸化物素子で巨大磁気抵抗と電流変調。北大，高性能透明酸化物の高電子移動度の起源解明 | OPTRONICS ONLINE。VLSI】ルネサスが酸化物半導体でCMOSインバータを実現、LSI配線内に。Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Lsi (Wiley-sid Series in Display Technology)2017 John Wiley and Sons酸化物半導体IGZOのLSI応用をまとめた書籍です。水素と触媒反応を利用して低接触抵抗IGZO-TFTを実現 －界面の選択的。This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.